MQWs

常见例句

• It can be applied to an arbitary refractive index profile of the MQW waveguide.
  该公式是偏振态和量子阱波导折射率分布的函数。
• Because of the lower electron mobility in the miniband, the photocurrent of SL is relatively lower than that of MQWs.
  虽然超晶格结构适合操作在低偏压下，超晶格的光电流相较之下还是比量子井结构的要低。
• We find that the photocurrent of this device is not reduced by the additional MQWs but the dark current is.
  我们发现超晶格所产生的光电流并没有因为量子井结构而降低，但暗电流却有减少。
• InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
  采用 In Ga As/ Ga As作为多量子阱 SEED器件的有源区 ;从而获得了 980 nm工作波长 .
• The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
  净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
• By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
  从实验的数据得知，在室温下，样品的矽发光强度随著注入电流的增加而有显著的增强；
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