field-effect transistor

基本解释

VDMOS power field-effect transistor is abroad 1980s with the rapid development of a new power devices.
VDMOS功率场效应晶体管是国外80年代迅速发展起来的一种新型功率器件。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
Field-Effect Transistor Memory This patent was issued to IBM inventor Robert Dennard June 4, 1968, for inventing a one-transistor dynamic RAM cell, which became the standard for computer memory.
该专利由IBM发明者Robert Dennard于1968年6月4日发布，一个有关晶体管动态RAM单元的发明，它成为了计算机内存的标准。

Besides which, the field-effect transistor camp has plenty of fight left.
ECONOMIST: The transistor’s heir

a unipolar transistor consisting of three or more electrode regions, the source, one or more gates, and the drain. A current flowing in a channel between the highly doped source and drain is controlled by the electric field arising from a voltage applied between source and gate ( abbr: FET)&rarrsee alsoJFET ,IGFET

场效应晶体管
To improve FET performance, the novel 4H-SiC metal-oxide-semiconductor field-effect transistor with implanted n-type layers near SiO2/SiC interface (4H-SiC BC-MOSFET) is presented in this paper.
为了提高场效应晶体管特性，本文介绍了一种新型结构的器件，简称4H-SiC埋沟MOSFET，就是在SiO2／SiC界面注入一层N型埋沟层。
场效应管
The Field-effect transistor (FET) resistive mixers are attractive for application because of the advantages of very low distortion and low noise.
场效应管(FET)阻性混频器,因具有失真小,噪声低等优点,而表现出诱人的应用前景。
场效电晶体