Warning: file_put_contents(): Only 0 of 6114 bytes written, possibly out of free disk space in /www/wwwroot/ppbbu/4cd.cn/index.php on line 55 grain semiconducting例句_grain semiconducting英汉例句_grain semiconducting双解例句_沉淀汉英词典
Insulated grain boundary on the semiconducting grain surface can be achieved by oxygenizing 10 minutes at 1100 degree. 在1100℃下氧化处理10分钟即可使半导化的晶粒表面形成绝缘的晶界。