heteroepitaxy

基本解释

• n.异质外延

同根派生

• heteroepitaxy相关词

英汉例句

• Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J].
  引用该论文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
• At present there exist two kinds of manufacturing met hods for silicon-based lasers,i.e.,heteroepitaxy and bonding.
  目前制作硅基激光器的方法主要分为两类，异质结外延生长和异质材料键合。
• The themes of this thesis, heteroepitaxy and ion implantation, are two areas that have been very actively researched in the last two decades.
  当元件尺度持续缩小至奈米尺度阶段时，深入了解未来先进奈米元件中金属薄膜与半导体基材间之界面反应是相当重要的一项课题。
• This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics.
  这种技术解决了外延生长难以解决的晶格失配问题，为改善器件结构及性能提供了巨大的潜力。
• Advance of the GaAs/Si Heteroepitaxy
  GaAs/Si异质外延的新进展

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