silicon substrate loss

基本解释

Using thick porous silicon layers can reduce the high frequency loss in Si substrate.
采用多孔硅厚膜作为隔离层，能够极大地降低衬底高频损耗。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
这些Q值受到导体电阻和硅衬底的涡流损耗的限制。
In order to reduce substrate loss and improve inductors' Q factor (Quality Factor), a novel insulation method, forming thick OPS layer on the low resistivity silicon (LRS) substrate, is proposed.
提出了一种在低阻硅衬底上形成氧化多孔硅厚膜来隔离硅衬底损耗的硅基平面电感结构；