GSMBE

常见例句

The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
以CBr_4作为碳杂质源，采用GSMBE技术生长了与InP匹配的重碳掺杂p型InGaAs材料。
Keywords InGaAs/InP, InGaP/GaAs, HBT, GSMBE, Carbon doping;
异质结双极晶体管;气态源分子束外延;碳掺杂;
GSMBE Growth and Characterization of In_(0.53)Ga_(0.47)As/InP Quantum Wells
匹配In_(0.;53)Ga_(0