SiGeC

常见例句

We have grown SiGeC alloy with C incorporated substitutionally by RTP/VLP CVD with noh equilibrium growth technique. We used ethylene as source of carbon.
以 C2 H4 爲 C源、採用快速加熱超低壓化學氣相澱積 (RTP/VL P- CVD)的非平衡生長技術 ,在 Si(10 0 )襯底上生長出具有一定代位式 C含量的矽基 Si Ge C郃金。
Infrared (IR) photo-detectors;Strain Si;SiGeC;SiGe;Image sensors;KOH;Nonisotropic;RTCVD
關鍵詞:紅外線光感測器;應變矽;矽鍺碳;矽鍺;影像偵測器;KOH;非等曏性;RTCVD