memory cell array

基本解释

The invention discloses a memory cell array arranged multiple in rows and lines.
本發明公開了存儲器單元陣列，以多行與多列排列。
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In a memory cell array, a plurality of memory cells having ferroelectric capacitors amplifies the potential of the bit lines of each memory cell.
半導躰存儲裝置。在存儲單元陣列中設置具有鉄電電容器的多個存儲單元。多個檢測放大器電路使各存儲單元的位線的電位放大。
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Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.
實施例包括個別存儲單元、這種存儲單元的陣列、操作所述存儲單元或所述存儲單元陣列的方法、以及其制造方法。